| PART |
Description |
Maker |
| HYB25D128323C |
128 Mbit DDR SGRAM 128兆的DDR SGRAM
|
Infineon Technologies AG
|
| IS43R16800A-6TL IS43R16800A-6T IS43R16800A-6 |
8Meg x 16 128-MBIT DDR SDRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS43R16800A1-5TL IS43R16800A1 |
8Meg x 16 128-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc
|
| HYB25D128160AT-6 HYB25D128400AT-7 HYB25D128800AT-7 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 128Mb (32Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 128Mb (16mx8) DDR266A (2-3-3)
128 Mbit Double Data Rate SDRAM
|
Infineon
|
| 42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| IBM0317329PQ6A-7R5 |
Synchronous Graphics RAM (SGRAM) 同步图形RAM（SGRAM
|
TUSONIX, Inc.
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| KM48L16031BT-GF0 KM48L16031BT-GFY KM48L16031BT-GFZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns.
DDR SDRAM Specification Version 0.61
128Mb DDR SDRAM
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CY14E101J2-SXIT CY14B101J1-SXI CY14B101J1-SXIT CY1 |
1-Mbit (128 K 8) Serial (I<sup>2</sup>C) nvSRAM
1-Mbit (128 K 8) Serial (I-2C) nvSRAM
|
Cypress
|
| JS28F128P33BF70 JS28F128P33TF70A PC28F640P33BF60A |
Numonyx? P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC)
|
Micron Technology
Microchip Technology
Numonyx B.V
|
| IS75V16F128GS32-7065BI |
3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
|
Integrated Silicon Solution, Inc.
|
| M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
